Suppression of Grain Growth in Vapor-Deposited Tungsten up to 2500&deg;C

A. F. Weinberg; J. R. Lindgren; N. B. Elsner; R. G. Mills

doi:dx.doi.org/10.13182/NT65-A20587

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Home / Publications / Journals / Nuclear Technology / Volume 1 / Number 6

Suppression of Grain Growth in Vapor-Deposited Tungsten up to 2500°C

A. F. Weinberg, J. R. Lindgren, N. B. Elsner, R. G. Mills

Nuclear Technology / Volume 1 / Number 6 / December 1965 / Pages 581-583

Technical Paper / dx.doi.org/10.13182/NT65-A20587

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Electropolishing removal of the layer of small equiaxed randomly oriented grains of tungsten initially deposited during the hydrogen reduction of WF₆ eliminates variance in subsequent grain-growth behavior in the overlying columnar crystals.