Nuclear Science and Engineering / Volume 55 / Number 1 / September 1974 / Pages 11-16
Technical Paper / dx.doi.org/10.13182/NSE74-A23960
Articles are hosted by Taylor and Francis Online.
General solutions are presented in power series form of kinetic equations for the annealing of radiation defects in an elemental semiconductor such as germanium. A kinetic model with an arbitrary number of types of defect complexes is considered, as well as a simple model based on only one species of defect complex. For the simple model, it is shown that a single nonlinear differential equation can be derived for the fraction of defects not annealed. The first integral of this nonlinear equation is obtained for a special case.