Nuclear Science and Engineering / Volume 47 / Number 4 / April 1972 / Pages 470-471
Technical Note / dx.doi.org/10.13182/NSE72-A22437
Articles are hosted by Taylor and Francis Online.
Empirical equations were obtained for the surface damage resulting from heavy ion irradiation of silicon and gallium arsenide single crystals in terms of the incident ion fluence. The parameters in these equations were found to depend only on ion speed and not on ion species for a given initial ion energy and a particular semiconductor material.