Deuterium Trapping in Ion-Implanted, Thermally-Grown Oxide Layers and Codeposited Beryllium Oxide

Deuterium trapping in beryllium oxide films irradiated with 400 eV D ions has been studied by Thermal Desorption Spectroscopy (TDS). It has been found that for thermally grown BeO films implanted in the range 300–900 K the total deuterium retention doesn’t depend on irradiation temperature whereas TDS spectra are temperature dependent. For R.T. implantation the deuterium is released in a wide range from 500 to 1100 K. At implantation above 600 K the main portion of retained deuterium is released in a single peak centered at about 1000 K. The similar TDS peak is measured for D/BeO co-deposited layer. In addition we correlate our implantation data on BeO with the relevant data on beryllium metal and carbon. The interrelations between deuterium retention and microstructure are discussed.