An Analytical Formula for the Concentration Distribution of Implanted Ions

Janusz Martan; Andrzej Mulak

doi:dx.doi.org/10.13182/FST87-A25061

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Home / Publications / Journals / Fusion Science and Technology / Volume 12 / Number 1

An Analytical Formula for the Concentration Distribution of Implanted Ions

Janusz Martan, Andrzej Mulak

Fusion Science and Technology / Volume 12 / Number 1 / July 1987 / Pages 163-165

Technical Note / Materials Engineering / dx.doi.org/10.13182/FST87-A25061

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The analytical expressions for the average ion range R, projected range R_p, and ion straggling DR_P in the projected range are presented. To determine the above-mentioned parameters, the approximation for nuclear stopping power S_n was used. The exemplary calculations of R_p, DR_P, and the concentration distribution of arsenic implanted into silicon were performed. The results were compared with experimental data, achieving satisfactory agreement.