Helium Implantation Effects on Retention Behavior of Hydrogen Isotopes in Oxygen-Contained Boron Films

He⁺ implantation effects on the Retention behavior of hydrogen isotopes implanted into 35% oxygen-contained boron film was studied by means of SEM, AFM, XPS and TDS. It was found that the D retention for only D₂⁺ implanted film was the highest and it decreased for pre-He⁺ implanted film and post-He⁺ implanted film. From the SEM and AFM images, the surface morphology of the oxygen-contained boron film was partly cracked, indicating that B₂O₃ was formed in the film. From the TDS and XPS results, the defective structure and the formation of B-D-B bond, B-D bond and B-O-D bond were observed by He⁺ and D₂⁺ implantation, respectively. It was suggested that oxygen was trapped as B-O bond. The reaction with implanted D₂⁺ was preceded in different mechanism.